Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition

被引：0

作者：

Polo, MC ^{[1
]}

Peiro, F ^{[1
]}

Cifre, J ^{[1
]}

Bertomeu, J ^{[1
]}

Puigdollers, J ^{[1
]}

Andreu, J ^{[1
]}

机构：

[1] UNIV BARCELONA,SERV CIENT TECN,E-08028 BARCELONA,SPAIN

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500 degrees C) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate surface along the [110] direction. Plan view examinations along the [110] axis revealed a needled shape of the crystals (0.3-1 mu m) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising.

引用

页码：503 / 506

页数：4

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