FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES

被引：50

作者：

CORNU, J ^{[1
]}

机构：

[1] BROWN BOVERI RES CTR,BADEN 5401,SWITZERLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 04期

关键词：

D O I：

10.1109/T-ED.1973.17654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：347 / 352

页数：6

共 50 条

[41] SILICON PHOTOCELLS WITH FIELD-INDUCED P-N-JUNCTIONS
GILMAN, BI
ZAKS, MB
KASATKIN, VV
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 831 - 832
[42] CURRENT-VOLTAGE RELATION IN SILICON P-N-JUNCTIONS - COMMENTS
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[43] AUGER VOLTAGE CONTRAST DEPTH PROFILING OF SHALLOW P-N-JUNCTIONS
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[44] SURFACE RECOMBINATION VELOCITIES ON PROCESSED INGAP P-N-JUNCTIONS
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[45] DELAY OF MICROPLASMA BREAKDOWN IN HIGH-VOLTAGE P-N JUNCTIONS IN SILICON
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[46] PHOTOACOUSTIC AND OBIC MEASUREMENTS ON PLANAR HIGH-VOLTAGE P+-N JUNCTIONS
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[47] PHOTORESPONSE NEAR ABSORPTION-EDGE IN SILICON P-N-JUNCTIONS
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[48] DETERMINATION OF POSITIONS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N JUNCTIONS
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[49] SURFACE BREAKDOWN AND STABILITY OF HIGH-VOLTAGE PLANAR JUNCTIONS
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[50] EFFECT OF BACKGATE BIAS ON THE BREAKDOWN VOLTAGE OF P-N-JUNCTIONS IN SOI FILMS
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