EFFECT OF DISLOCATIONS ON EXTERNAL QUANTUM EFFICIENCY OF GA1-XALXAS=SI LEDS

被引：0
|
作者：
ROEDEL, RJ [1 ]
VONNEIDA, AR [1 ]
CARUSO, R [1 ]
DAWSON, LR [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C306 / C306
页数：1
相关论文
共 50 条
  • [31] IMPURITY COMPENSATION IN GA1-XALXAS ALLOYS
    SAXENA, AK
    SINGH, BB
    PHYSICAL REVIEW B, 1983, 28 (02): : 1132 - 1133
  • [32] DX CENTER IN GA1-XALXAS ALLOYS
    BOURGOIN, JC
    FENG, SL
    VONBARDELEBEN, HJ
    PHYSICAL REVIEW B, 1989, 40 (11): : 7663 - 7670
  • [33] A STUDY OF ALLOY SCATTERING IN GA1-XALXAS
    CHANDRA, A
    EASTMAN, LF
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2669 - 2677
  • [34] Refractive index model for Ga1-xAlxAs
    Kong, Jun
    Zhang, Weijun
    Yang, Zhilian
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1999, 20 (09): : 748 - 752
  • [35] Localized States in GaAs/Ga1-XAlxAs Multi-Quantum-Wells
    Elamri, F. Z.
    Falyouni, F.
    Tahri, Z.
    Bria, D.
    PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ELECTRONIC ENGINEERING AND RENEWABLE ENERGY, ICEERE 2018, 2019, 519 : 137 - 145
  • [36] REFRACTIVE-INDEX OF GA1-XALXAS
    AFROMOWITZ, MA
    SOLID STATE COMMUNICATIONS, 1974, 15 (01) : 59 - 63
  • [37] Spin and cyclotron energies of electrons in GaAs/Ga1-xAlxAs quantum wells
    Pfeffer, P.
    Zawadzki, W.
    PHYSICAL REVIEW B, 2006, 74 (11)
  • [38] Hydrogenic impurity effect on the optical properties of Ga1-xAlxAs quantum wire under terahertz field
    Priyanka
    Sharma, Rinku
    Kumar, Manoj
    Kumar, Pradumn
    MICRO AND NANOSTRUCTURES, 2023, 173
  • [39] NEAR-INFRARED HIGH-POWER LEDS WITH GA1-XALXAS EPITAXIALLY GROWN JUNCTIONS
    KURATA, K
    ONO, Y
    MORIOKA, M
    ITO, K
    MORI, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) : 525 - 531
  • [40] FREE-TO-BOUND TRANSITIONS IN SI-DOPED EPITAXIAL GA1-XALXAS
    SWAMINATHAN, V
    STURGE, MD
    ZILKO, JL
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6306 - 6311
12345