DAMAGE AND DEFECTS IN PB1-XSNXTE CRYSTALS

被引：0

作者：

PARKER, SG ^{[1
]}

GULDI, RL ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C90 / C90

页数：1

共 50 条

[41] FERROELECTRIC PROPERTIES OF IN-DOPED PB1-XSNXTE CRYSTALS (X=0.25)
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[47] ION-IMPLANTATION-INDUCED DAMAGE AND RESONANT LEVELS IN PB1-XSNXTE
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[49] IMPURITY LEVELS IN PBTE AND PB1-XSNXTE
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[50] CARRIER MOBILITIES IN PB1-XSNXTE ALLOYS
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