MAGNETOPOLARONS IN INVERSION-LAYERS ON INSB

被引:18
|
作者
MERKT, U
HORST, M
KOTTHAUS, JP
机构
来源
PHYSICA SCRIPTA | 1986年 / T13卷
关键词
D O I
10.1088/0031-8949/1986/T13/045
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:272 / 281
页数:10
相关论文
共 50 条
  • [31] OBSERVATION OF VELOCITY OVERSHOOT IN SILICON INVERSION-LAYERS
    ASSADERAGHI, F
    KO, PK
    HU, CM
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (10) : 484 - 486
  • [32] INFLUENCE OF THIN INVERSION-LAYERS ON SCHOTTKY DIODES
    SHARMA, KK
    REVUE DE PHYSIQUE APPLIQUEE, 1986, 21 (01): : 25 - 33
  • [33] EFFECTS OF A STAIRCASE ON MINIGAPS IN SI INVERSION-LAYERS
    OHKAWA, FJ
    PHYSICAL REVIEW B, 1981, 24 (12): : 7297 - 7303
  • [34] MAGNETOCONDUCTANCE AND WEAK LOCALIZATION IN SILICON INVERSION-LAYERS
    WHEELER, RG
    PHYSICAL REVIEW B, 1981, 24 (08): : 4645 - 4651
  • [35] VALLEY OCCUPANCY TRANSITION IN SI INVERSION-LAYERS
    ISIHARA, A
    IORIATTI, LC
    PHYSICAL REVIEW B, 1982, 25 (08): : 5534 - 5537
  • [36] THE THERMOELECTRIC EFFECT IN SILICON ON SAPPHIRE INVERSION-LAYERS
    SYME, RT
    PEPPER, M
    GUNDLACH, A
    RUTHVEN, A
    SUPERLATTICES AND MICROSTRUCTURES, 1988, 5 (01) : 103 - 107
  • [37] A COMPREHENSIVE MODEL FOR COULOMB SCATTERING IN INVERSION-LAYERS
    GAMIZ, F
    LOPEZVILLANUEVA, JA
    JIMENEZTEJADA, JA
    MELCHOR, I
    PALMA, A
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) : 924 - 934
  • [38] INVERSION-LAYERS OF TELLURIUM IN MAGNETIC-FIELDS
    KACZMAREK, E
    BANGERT, E
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (04): : 695 - 704
  • [39] SUBMILLIMETER PHOTOCONDUCTIVITY IN INVERSION-LAYERS AT A SILICON SURFACE
    BEREGULIN, EV
    GANICHEV, SD
    GLUKH, KY
    GUSEV, GM
    KVON, ZD
    MARTISOV, MY
    SHIK, AY
    YAROSHETSKII, ID
    JETP LETTERS, 1988, 48 (05) : 269 - 272
  • [40] OBSERVATION OF RESONANT TUNNELING IN SILICON INVERSION-LAYERS
    FOWLER, AB
    TIMP, GL
    WAINER, JJ
    WEBB, RA
    PHYSICAL REVIEW LETTERS, 1986, 57 (01) : 138 - 141