INVERSE PHOTOEMISSION-STUDY OF REFRACTORY-METAL SILICON INTERFACES

The unoccupied electronic states of the interfaces formed by the heavy refractory metals (W, Mo, Ta and Nb) with a silicon substrate have been investigated by inverse photoemission in the UV range. Emission from metals dominates the IPE spectra. In the submonolayer range the four metals give alike unoccupied densities of states, consisting of a broad structure centered at about 2-3 eV above the Fermi level, which is attributed to the antibonding states of the chemisorbed metal atoms. At higher surface coverage theta, two types of spectrum evolution are observed. For Mo and W on the one hand, which form abrupt interfaces with Si, the IPE spectra tend rapidly towards the metal ones, already attained at theta greater-than-or-equal-to 3 ML. For Nb and Ta on the other hand, which form "surface disilicide" thin layers and diffuse interfaces, the metal spectra develop at much higher theta. The conduction bands of the "surface disilicides" are different from bulk silicide ones, indicating a lack of long range order.