STUDIES OF PHOTON ENERGY-DEPENDENCE OF TRANSIENT PHOTOCURRENT IN SEMIINSULATING GAAS MATERIALS BY MEANS OF PHOTO-DEEP-LEVEL FOURIER SPECTROSCOPY AND PHOTOSENSITIVITY TRANSIENT SPECTROSCOPY

被引：2

作者：

IKEDA, K

ISHII, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷 / 03期

关键词：

D O I：

10.1143/JJAP.26.377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：377 / 382

页数：6

共 29 条

[21] DEVICE GEOMETRY AND TEMPERATURE-DEPENDENCE OF DEEP LEVEL TRANSIENT SPECTROSCOPY SPECTRA OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
ZHAO, JH
JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) : 3895 - 3897
[22] DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
ZHU, QS
ZHONG, ZT
LU, LW
LI, CF
APPLIED PHYSICS LETTERS, 1994, 65 (19) : 2425 - 2427
[23] Analysis of energy levels of InAs/GaAs self-assembled quantum dots by using C-V and deep level transient spectroscopy
Kim, Jin Soak
Kim, Eun Kyu
Kim, Jun Oh
Lee, Sang Jun
Noh, Sam Kyu
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (04): : 808 - 811
[24] Conduction and valence band offsets in GaAlAs/GaAs/GaAlAs quantum wells from photo-luminescence and deep level transient spectroscopy under hydrostatic pressure
Saxena, AK
SOLID STATE COMMUNICATIONS, 1999, 113 (04) : 201 - 206
[25] Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy
Appl Phys Lett, 8 (1108):
[26] Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy
Choi, KJ
Lee, JL
APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1108 - 1110
[27] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF NI-DIFFUSED AND ZN-DIFFUSED VAPOR-PHASE EPITAXY N-GAAS
PARTIN, DL
CHEN, JW
MILNES, AG
VASSAMILLET, LF
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6845 - 6859
[28] SCANNING ELECTRON-MICROSCOPY - ELECTRON-BEAM INDUCED CURRENT AND DEEP LEVEL TRANSIENT SPECTROSCOPY STUDIES OF GAAS(IN) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
HUANG, YJ
IOANNOU, DE
ILIADIS, A
SCANNING MICROSCOPY, 1988, 2 (01) : 129 - 132
[29] INVESTIGATION OF DX CENTERS IN MODULATION-DOPED FIELD-EFFECT TRANSISTOR-TYPE AL0.3GA0.7AS/GAAS HETEROSTRUCTURES USING A FOURIER-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY SYSTEM
HADDAB, Y
PY, MA
BUHLMANN, HJ
ILEGEMS, M
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (12) : 1343 - 1347

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