HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CORRELATION BETWEEN OFF-CURRENT AND TRANSCONDUCTANCE VARIATIONS

被引：56
|
作者：
FORTUNATO, G
PECORA, A
TALLARIDA, G
MARIUCCI, L
REITA, C
MIGLIORATO, P
机构：
[1] ENEA,CRIF,PORTICI,ITALY
[2] GEC MARCONI LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
[3] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,CAMBS,ENGLAND
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 03期
关键词：
D O I：
10.1109/16.275218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The application of bias-stresses with high source-drain voltage and different gate voltages in polycrystalline thin-film transistors modifies the transconductance as well as the off current, These effects have been explained in terms of hot-holes injection into the gate insulator causing the formation of trap centers in the oxide and interface states near the drain.
引用
收藏
页码：340 / 346
页数：7
相关论文
共 50 条
  • [21] Mechanism of on-current and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors
    De Wang, S
    Chang, TY
    Lo, WH
    Lei, TF
    2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 702 - 703
  • [22] Kinetics of interface state generation induced by hot carriers in N-channel polycrystalline silicon thin-film transistors
    Fortunato, Guglielmo
    Pecora, Alessandro
    Policicchio, Irma
    Plais, Francois
    Pribat, Didier
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 1544 - 1547
  • [23] HOT-CARRIER STRESS DAMAGE IN THE GATE OFF STATE IN N-CHANNEL TRANSISTORS
    DOYLE, BS
    MISTRY, KR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) : 1774 - 1776
  • [24] Kinetics of interface state generation induced by hot carriers in N-channel polycrystalline silicon thin-film transistors
    Fortunato, G
    Pecora, A
    Policicchio, I
    Plais, F
    Pribat, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1544 - 1547
  • [25] N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS USING AS-DEPOSITED POLYCRYSTALLINE SILICON AND ION DOPING
    LIM, HJ
    RYU, BY
    JANG, J
    APPLIED PHYSICS LETTERS, 1995, 66 (21) : 2888 - 2890
  • [26] Effects of NH3 plasma passivation on N-channel polycrystalline silicon thin-film transistors
    Cheng, HC
    Wang, FS
    Huang, CY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) : 64 - 68
  • [27] Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing
    Lee, Ming-Hsien
    Chang, Kai-Hsiang
    Lin, Horng-Chih
    Journal of Applied Physics, 2007, 101 (05):
  • [28] Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing
    Lee, Ming-Hsien
    Chang, Kai-Hsiang
    Lin, Horng-Chih
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
  • [29] HOT CARRIERS EFFECTS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    MARIUCCI, L
    PECORA, A
    FORTUNATO, G
    REITA, C
    MIGLIORATO, P
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 109 - 114
  • [30] Effective density-of-states distribution of polycrystalline silicon thin-film transistors under hot-carrier degradation
    Lee, Ming-Hsien
    Chang, Kai-Hsiang
    Lin, Horng-Chih
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)
12345