共 50 条
- [32] RADIATION-DAMAGE STUDIES ON SINGLE-SIDED AND DOUBLE-SIDED SILICON MICROSTRIP DETECTORS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 348 (2-3): : 449 - 453
- [33] INVESTIGATION OF RADIATION-DAMAGE IN SILICON BY A BACKSCATTERING METHOD RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01): : 27 - 32
- [34] INFLUENCE OF IRRADIATION INTENSITY ON RADIATION-DAMAGE OF SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 800 - 800
- [35] RADIATION-DAMAGE TO SURFACE-LAYERS OF SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04): : 572 - 572
- [36] THE INFLUENCE OF RADIATION-DAMAGE ON THE SPUTTERING YIELD OF SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 483 - 486
- [37] RECENT RESULTS OF RADIATION-DAMAGE STUDIES IN SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 344 (01): : 228 - 236
- [38] CARBON IN RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19): : L499 - L503
- [39] PROFILES OF RADIATION-DAMAGE AND IMPLANTED BORON IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 395 - 396