INSITU ANNEALING TRANSMISSION ELECTRON-MICROSCOPY (TEM) STUDY OF THE TI/GAAS INTERFACIAL REACTIONS

被引：2
|
作者：
KIM, KB
SINCLAIR, R
机构：
来源：
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷
关键词：
D O I：
10.1557/PROC-148-21
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：21 / 27
页数：7
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