WEAK-BEAM MICROSCOPY

被引：0

作者：

VANDERSANDE, JB ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C387 / C387

页数：1

共 50 条

[31] WEAK-BEAM OBSERVATION OF DISLOCATION LOOPS IN SILICON
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[34] The weak-beam technique applied to the analysis of materials properties
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[39] A study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy
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[40] OBSERVATIONS OF LATTICE DEFECTS USING WEAK-BEAM TECHNIQUE
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