VACUUM-DEPOSITED THIN-FILM CAPACITORS OF SILICON MONOXIDE

被引：9
|
作者：
VANSTEEN.K
机构：
来源：
MICROELECTRONICS RELIABILITY | 1967年 / 6卷 / 04期
关键词：
D O I：
10.1016/0026-2714(67)90081-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：261 / &
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