Effect of the Deposition Temperature on the Transmittance & Electrical Conductivity of In1.6Zn0.2Sn0.2O3-delta Thin Films Prepared by RF-magnetron Sputtering

In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of In1.6 similar to 1.8Zn0.2Sn0.2 similar to 0.4O3 ( IZTO), In1.6Zn0.2Sn0.2O3-delta(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at 400 degrees C, the electrical resistivity of the film decreased to 6.34 x 10(-4) Omega center dot cm and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.