Highly near-infrared reflecting and transparent conducting ZnO: Ga films:: substrate temperature effect

Highly near-infrared (IR) reflecting and transparent conducting Ga-doped ZnO films were deposited on a glass substrate by dc reactive magnetron sputtering. The influence of substrate temperature on the structural, electrical and optical properties of the films was investigated. A lowest resistivity of 3.0 x 10(-4) Omega cm was obtained at the substrate temperature of 300 degrees C. The average transmittance of the films is over 90% in the visible range. The IR transmission cut-off wavelength of the films shifts towards the lower wavelength with increasing electron concentration. All the films have low transmittance and high reflectance in the near-IR region. The IR reflectance of the films shows an increase with increasing electron concentration.