Highly near-infrared reflecting and transparent conducting ZnO: Ga films:: substrate temperature effect

被引：21
|
作者：
Ma, Quan-Bao [1 ]
Ye, Zhi-Zhen [1 ]
He, Hai-Ping [1 ]
Zhu, Li-Ping [1 ]
Liu, Wei-Chang [1 ]
Yang, Ye-Feng [1 ]
Gong, Li [1 ]
Huang, Jing-Yun [1 ]
Zhang, Yin-Zhu [1 ]
Zhao, Bing-Hui [1 ]
机构：
[1] Zhejiang Univ, Dept Mat, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 05期
关键词：
D O I：
10.1088/0022-3727/41/5/055302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly near-infrared (IR) reflecting and transparent conducting Ga-doped ZnO films were deposited on a glass substrate by dc reactive magnetron sputtering. The influence of substrate temperature on the structural, electrical and optical properties of the films was investigated. A lowest resistivity of 3.0 x 10(-4) Omega cm was obtained at the substrate temperature of 300 degrees C. The average transmittance of the films is over 90% in the visible range. The IR transmission cut-off wavelength of the films shifts towards the lower wavelength with increasing electron concentration. All the films have low transmittance and high reflectance in the near-IR region. The IR reflectance of the films shows an increase with increasing electron concentration.
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页数：5
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