WEAK BEAM OBSERVATION OF DISLOCATION LOOPS IN SILICON

被引：12
作者：
BICKNELL, RW
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1971年 / 7卷 / 01期
关键词：
D O I：
10.1002/pssa.2210070137
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：K1 / &
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[2]   DISTRIBUTION OF CONDENSED DEFECT STRUCTURES FORMED IN ANNEALED BORON-IMPLANTED SILICON [J].
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PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 311 (1504) :75-&
[3]  
BICKNELL RW, 1970, EUROP C ION IMPLANTA
[4]   INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J].
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RAY, ILF ;
WHELAN, MJ .
PHILOSOPHICAL MAGAZINE, 1969, 20 (168) :1265-&
[5]  
HIRSCH PB, 1965, ELECTRON MICROSCOPY
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