DISTRIBUTION OF CONDENSED DEFECT STRUCTURES FORMED IN ANNEALED BORON-IMPLANTED SILICON

被引：18

|

作者：

BICKNELL, RW

机构：

来源：

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1969年 / 311卷 / 1504期

关键词：

D O I：

10.1098/rspa.1969.0101

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

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页码：75 / &

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