Design and Analysis of a Low Power Multi-Threshold CMOS Based ARM926 System

被引:0
|
作者
Idgunji, Sachin [1 ]
Flynn, David [2 ,3 ]
机构
[1] ARM, Res Grp Specializing Syst Circuit Design & Anal, Sunnyvale, CA 94089 USA
[2] ARM Ltd, R&D, Cambridge, England
[3] Univ Southampton, Elect & Comp Sci Dept, Southampton, Hants, England
关键词
MTCMOS; Dynamic Voltage Frequency Scaling (DVFS); Leakage; Energy Efficiency;
D O I
10.1166/jolpe.2008.153
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Low Power techniques such as multi-voltage islands, voltage scaling and power gating are gaining acceptance to address the need for managing energy and power during run time as well as during standby modes. These design techniques increase the complexity of implementing and analyzing the power network to meet the required average IR drop requirements, transient turn on in-rush (out-rush) currents as well as dynamic voltage drops during runtime. We have designed an ARM926 based SoC that implements the above techniques including a multi-threshold CMOS (MTCMOS) based processor core. To analyze the effects of associated with power gating we have built in, as part of the logic design, a system that uses the scan chain based network to observe the effects of transient currents on the virtual power network on state retention. The system can also be used to check the integrity of the retention latches when the design has been powered off using the MTCMOS network. This paper describes the design techniques and presents the analysis of the energy savings for different modes.
引用
收藏
页码:48 / 59
页数:12
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