GAAS/ALGAAS HETEROJUNCTION PNP BIPOLAR-TRANSISTORS GROWN ON (100) SI BY MOLECULAR-BEAM EPITAXY

被引：3
|
作者：
WON, T [1 ]
LITTON, CW [1 ]
MORKOC, H [1 ]
YARIV, A [1 ]
机构：
[1] CALTECH,PASADENA,CA 91125
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 10期
关键词：
D O I：
10.1049/el:19880399
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：588 / 590
页数：3
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