NONDESTRUCTIVE MEASUREMENT OF POROUS SILICON THICKNESS USING X-RAY REFLECTIVITY

被引：13
|
作者：
GUILINGER, TR
KELLY, MJ
CHASON, EH
HEADLEY, TJ
HOWARD, AJ
机构：
[1] Sandia National Laboratories, Albuquerque
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 05期
关键词：
D O I：
10.1149/1.2048627
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper, we describe a nondestructive method based on x-ray reflectivity for measuring the thickness of porous silicon layers as well as the interfacial roughness between the porous silicon and the single-crystal silicon substrate. Thickness and interfacial roughness measured using this method compare favorably with values measured using transmission electron microscopy and atomic force microscopy but differ from values obtained by gravimetric techniques for porous silicon layers thinner than 150 nm.
引用
收藏
页码：1634 / 1636
页数：3
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