NONDESTRUCTIVE MEASUREMENT OF POROUS SILICON THICKNESS USING X-RAY REFLECTIVITY

被引：13
|
作者：
GUILINGER, TR
KELLY, MJ
CHASON, EH
HEADLEY, TJ
HOWARD, AJ
机构：
[1] Sandia National Laboratories, Albuquerque
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 05期
关键词：
D O I：
10.1149/1.2048627
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper, we describe a nondestructive method based on x-ray reflectivity for measuring the thickness of porous silicon layers as well as the interfacial roughness between the porous silicon and the single-crystal silicon substrate. Thickness and interfacial roughness measured using this method compare favorably with values measured using transmission electron microscopy and atomic force microscopy but differ from values obtained by gravimetric techniques for porous silicon layers thinner than 150 nm.
引用
收藏
页码：1634 / 1636
页数：3
相关论文
共 50 条
  • [1] X-ray reflectivity study of porous silicon formation
    Chamard, V
    Dolino, G
    Eymery, J
    MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998, 1999, 536 : 293 - 298
  • [2] Nondestructive characterization of thin silicides using x-ray reflectivity
    Detavernier, C
    De Gryse, R
    Van Meirhaeghe, RL
    Cardon, F
    Ru, GP
    Qu, XP
    Li, BZ
    Donaton, RA
    Maex, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (02): : 470 - 476
  • [3] Thickness measurement of thin films and multilayers using Fourier transform of X-ray reflectivity
    Tiwari, U
    Sharma, RK
    Sehgal, BK
    Goyal, A
    Sharma, BB
    Kumar, V
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 1014 - 1017
  • [4] X-ray diffraction and reflectivity studies of thin porous silicon layers
    Buttard, D
    Dolino, G
    Bellet, D
    Baumbach, T
    ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 437 - 442
  • [5] Measurement of porosity of porous silicon using X-ray refraction effect
    Maehama, Takehiro
    Yonamine, Atsushi
    Sonegawa, Tomihiro
    Itoh, Nobuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (6 A): : 3649 - 3656
  • [6] Measurement of porosity of porous silicon using X-ray refraction effect
    Maehama, T
    Yonamine, A
    Sonegawa, T
    Itoh, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A): : 3649 - 3656
  • [7] X-Ray Reflectivity Study of Formation of Multilayer Porous Anodic Oxides of Silicon
    Vitali Parkhutik
    Y. Chu
    H. You
    Z. Nagy
    P.A. Montano
    Journal of Porous Materials, 2000, 7 : 27 - 31
  • [8] X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon
    Parkhutik, V
    Chu, Y
    You, H
    Nagy, Z
    Montano, PA
    JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 27 - 31
  • [9] Light assisted formation of porous silicon investigated by X-ray diffraction and reflectivity
    Chamard, V
    Setzu, S
    Romestain, R
    APPLIED SURFACE SCIENCE, 2002, 191 (1-4) : 319 - 327
  • [10] X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon
    Parkhutik, Vitali
    Chu, Y.
    You, H.
    Nagy, Z.
    Montano, P.A.
    Journal of Porous Materials, 2000, 7 (01) : 27 - 31
12345