HIGH-BRIGHTNESS DIODE-LASER-PUMPED SEMICONDUCTOR HETEROSTRUCTURE LASERS

被引：4
|
作者：
LE, HQ
GOODHUE, WD
DICECCA, S
机构：
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期
关键词：
D O I：
10.1063/1.107316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel, generic design for diode-pumped lasers and amplifiers utilizing semiconductor heterostructures has been implemented in the InGaAs/GaAs/AlGaAs material system. The spatial and spectral characteristics of these heterostructures are optimized to provide low output beam divergence, low aspect ratio, high efficiency, and low threshold. A pump-power-limited cw output of 0.58 W was obtained with diode-array pumping, and a peak power of 33 W per facet was achieved with pulsed Ti:Al2 O3 laser pumping. A near-diffraction-limited output beam with a divergence of 14-degrees by 3.4-degrees has been obtained.
引用
收藏
页码：1280 / 1282
页数：3
相关论文
共 50 条
  • [21] High-power, high-brightness diode-pumped solid-state laser for precise laser processings
    Fujikawa, S
    Furuta, K
    Seguchi, M
    Kojima, T
    Takenaka, Y
    Yasui, K
    SECOND INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION, 2002, 4426 : 472 - 474
  • [22] High-brightness fiber coupled diode laser systems
    Roh, S. D.
    Grasso, D. M.
    Ostrom, N. P.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS V, 2007, 6456
  • [23] High-brightness long-wavelength semiconductor disk lasers
    Schulz, Nicola
    Hopkins, John-Mark
    Rattunde, Marcel
    Burns, David
    Wagner, Joachim
    LASER & PHOTONICS REVIEWS, 2008, 2 (03) : 160 - 181
  • [24] High-brightness 2.X μm semiconductor lasers
    Rattunde, M.
    Kelemen, M. T.
    Schulz, N.
    Pfahler, C.
    Manz, C.
    Schmitz, J.
    Kaufel, G.
    Wagner, J.
    MID-INFRARED COHERENT SOURCES AND APPLICATIONS, 2008, : 193 - 224
  • [25] High-power, high-brightness semiconductor tapered diode lasers for the red and near infrared spectral range
    Sumpf, B.
    Wenzel, H.
    Erbert, G.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS IX, 2010, 7616
  • [26] High-power diode-laser-pumped midwave infrared HgCdTe/CdZnTe quantum well lasers
    Le, HQ
    Sanchez, A
    Arias, JM
    Zandian, M
    Zucca, RR
    Liu, YZ
    NARROW GAP SEMICONDUCTORS 1995, 1995, (144): : 24 - 30
  • [27] Clarinet laser: Semiconductor laser design for high-brightness applications
    Borruel, L
    Esquivias, I
    Moreno, P
    Krakowski, M
    Auzanneau, SC
    Calligaro, M
    Parillaud, O
    Lecomte, M
    Sujecki, S
    Wykes, J
    Larkins, EC
    APPLIED PHYSICS LETTERS, 2005, 87 (10)
  • [28] DIODE-LASER-PUMPED INGAAS/GAAS/ALGAAS HETEROSTRUCTURE LASERS WITH LOW INTERNAL LOSS AND 4-W AVERAGE POWER
    LE, HQ
    GOODHUE, WD
    MAKI, PA
    DICECCA, S
    APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1465 - 1467
  • [29] Modelocking of a diode-laser-pumped Ti:sapphire laser
    Roth, Peter W.
    Maclean, Alexander J.
    Burns, David
    Kemp, Alan J.
    2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), 2010,
  • [30] Directly diode-laser-pumped Ti:sapphire laser
    Roth, Peter W.
    Maclean, Alexander J.
    Burns, David
    Kemp, Alan J.
    OPTICS LETTERS, 2009, 34 (21) : 3334 - 3336
12345