HIGH-BRIGHTNESS DIODE-LASER-PUMPED SEMICONDUCTOR HETEROSTRUCTURE LASERS

被引：4
|
作者：
LE, HQ
GOODHUE, WD
DICECCA, S
机构：
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期
关键词：
D O I：
10.1063/1.107316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel, generic design for diode-pumped lasers and amplifiers utilizing semiconductor heterostructures has been implemented in the InGaAs/GaAs/AlGaAs material system. The spatial and spectral characteristics of these heterostructures are optimized to provide low output beam divergence, low aspect ratio, high efficiency, and low threshold. A pump-power-limited cw output of 0.58 W was obtained with diode-array pumping, and a peak power of 33 W per facet was achieved with pulsed Ti:Al2 O3 laser pumping. A near-diffraction-limited output beam with a divergence of 14-degrees by 3.4-degrees has been obtained.
引用
收藏
页码：1280 / 1282
页数：3
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