EFFECTIVE-MASS NATURE OF DEEP-LEVEL POINT-DEFECT STATES IN SEMICONDUCTORS

被引：12

|

作者：

PANTELIDES, ST

LIPARI, NO

BERNHOLC, J

机构：

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 33卷 / 10期

关键词：

D O I：

10.1016/0038-1098(80)90314-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1045 / 1049

页数：5

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