VACANCY INTERACTIONS IN SILICON

被引：48

作者：

WOODBURY, HH

LUDWIG, GW

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.5.96

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：96 / 97

页数：2

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