INTEGRATED FERROELECTRICS

被引:41
|
作者
DEARAUJO, CAP [1 ]
TAYLOR, GW [1 ]
机构
[1] PRINCETON RESOURCES INC,PRINCETON,NJ 08540
关键词
D O I
10.1080/00150199108007944
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper attempts to formalize the field of Integrated Ferroelectrics. The history of devices that include ferroelectrics and semiconductor hybrids is reviewed. The modern ferroelectric device is a combination of ferroelectric thinfilms onto a semiconductor single crystal substrate. The evolution of the field in the last few years seems to indicate that a variety of devices, based on this simple paradigm, is starting to appear. Although nonvolatile memories and high dielectric constant integrated capacitors seem to be the technology drivers, many other applications are also being envisioned. The complexities of ferroelectric/semiconductor process interactions are also being resolved. At the writing of this paper, the field has grown into an established field of research with some commercial applications already beginning to appear. © 1991, Taylor & Francis Group, LLC. All rights reserved.
引用
收藏
页码:215 / 228
页数:14
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