SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS

被引：30
|
作者：
HSIAO, TC
WOO, JCS
机构：
[1] University of California, Department of Electrical Engineering, Los Angeles
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期
关键词：
D O I：
10.1109/16.387246
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an analytic current-voltage model in the subthreshold regime for submicrometer fully depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the dependence of the effective depleted charge on the drain bias and the voltage drop in the substrate region underneath the buried oxide. In addition to predicting accurate subthreshold current-voltage characteristics and subthreshold slope, this model can be used to predict important Short Channel Effects (SCE) such as the threshold voltage roll-off and Drain-Induced Barrier Lowering (DIBL), This model is verified by comparison to a two-dimensional device simulator, MEDICI. Good agreement is obtained for SOI channel lengths down to 0.25 mu m.
引用
收藏
页码：1120 / 1125
页数：6
相关论文
共 50 条
  • [31] INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFETS BY THE DYNAMIC TRANSCONDUCTANCE TECHNIQUE
    IOANNOU, DE
    ZHONG, XD
    MAZHARI, B
    CAMPISI, GJ
    HUGHES, HL
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 430 - 432
  • [32] Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX
    Li, Y
    Niu, GF
    Cressler, JD
    Patel, J
    Marshall, CJ
    Marshall, PW
    Kim, HS
    Reed, RA
    Palmer, MJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 2146 - 2151
  • [33] Scaling behavior of sub-micron MOSFETs on fully depleted SOI
    Kistler, N
    Woo, J
    SOLID-STATE ELECTRONICS, 1996, 39 (04) : 445 - 454
  • [34] Discrete dopant effects in ultrasmall fully depleted ballistic SOI MOSFETs
    Gilbert, MJ
    Ferry, DK
    SUPERLATTICES AND MICROSTRUCTURES, 2003, 34 (3-6) : 277 - 282
  • [35] On the Stability of Fully Depleted SOI MOSFETs Under Lithography Process Variations
    Kampen, Christian
    Fuehner, Tim
    Burenkov, Alexander
    Erdmann, Andreas
    Lorenz, Juergen
    Ryssel, Heiner
    ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, : 194 - 197
  • [36] Characteristics of double-gate, dual-strained-channel, fully-depleted SOI MOSFETs
    Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
    Pan Tao Ti Hsueh Pao, 2008, 2 (338-343): : 338 - 343
  • [37] Subthreshold current model of fully depleted dual material gate SOI MOSFET
    苏军
    李尊朝
    张莉丽
    Academic Journal of Xi'an Jiaotong University, 2007, (02) : 135 - 137
  • [38] An analytical model for the subthreshold current of fully depleted strained-SOI MOSFET
    Qin, Shanshan
    Zhang, Heming
    Hu, Huiyong
    Xu, Xiaobo
    Wang, Xiaoyan
    MECHANICAL AND AEROSPACE ENGINEERING, PTS 1-7, 2012, 110-116 : 3332 - 3337
  • [39] PHYSICAL SUBTHRESHOLD MOSFET MODELING APPLIED TO VIABLE DESIGN OF DEEP-SUBMICROMETER FULLY DEPLETED SOI LOW-VOLTAGE CMOS TECHNOLOGY
    YEH, PC
    FOSSUM, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (09) : 1605 - 1613
  • [40] PARASITIC BIPOLAR GAIN IN FULLY DEPLETED N-CHANNEL SOI MOSFETS
    VERPLOEG, EP
    NGUYEN, CT
    WONG, SS
    PLUMMER, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) : 970 - 977
12345