HOT-CARRIER DEGRADATION OF NMOSTS STRESSED AT 4.2-K

被引：2
|
作者：
SIMOEN, E
CLAEYS, C
机构：
[1] IMEC, B-3001 Leuven
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期
关键词：
D O I：
10.1016/0038-1101(93)90262-O
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of a systematic study of the degradation behaviour of nMOSTs stressed at 4.2 K will be reported. It will be shown that the stress-induced changes can be classified in reversible and irreversible (permanent) degradation, which strongly depend on the operation conditions during stress. The reversible changes are mainly related to hole-trapping in the body of the transistor and are accompanied by a decrease of the threshold voltage and a small transconductance overshoot. The effect of Channel Hot Carrier (CHC) stress on the typical 4.2 K anomalies (kink/hysteresis) will also be addressed and briefly discussed in view of recently published models.
引用
收藏
页码：527 / 532
页数：6
相关论文
共 50 条
  • [11] HOT-CARRIER DEGRADATION OF CMOS INVERTERS AND RING OSCILLATORS AT 77K
    HSU, JT
    LI, X
    AUM, P
    CHAN, D
    VISWANATHAN, CR
    JOURNAL DE PHYSIQUE IV, 1994, 4 (C6): : 37 - 41
  • [12] Theory of channel hot-carrier degradation in MOSFETs
    Hess, K
    Register, LF
    McMahon, W
    Tuttle, B
    Aktas, O
    Ravaioli, U
    Lyding, JW
    Kizilyalli, IC
    PHYSICA B-CONDENSED MATTER, 1999, 272 (1-4) : 527 - 531
  • [13] Analysis of the Features of Hot-Carrier Degradation in FinFETs
    A. A. Makarov
    S. E. Tyaginov
    B. Kaczer
    M. Jech
    A. Chasin
    A. Grill
    G. Hellings
    M. I. Vexler
    D. Linten
    T. Grasser
    Semiconductors, 2018, 52 : 1298 - 1302
  • [14] Theory of channel hot-carrier degradation in MOSFETs
    Hess, K.
    Register, L.F.
    McMahon, W.
    Tuttle, B.
    Aktas, O.
    Ravaioli, U.
    Lyding, J.W.
    Kizilyalli, I.C.
    Physica B: Condensed Matter, 1999, 272 (01): : 527 - 531
  • [15] IMPROVEMENT OF HOT-CARRIER DEGRADATION IN COOLED CMOS
    AOKI, M
    SHIMOHIGASHI, K
    YANO, K
    MASUHARA, T
    1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 81 - 82
  • [16] Analysis of the Features of Hot-Carrier Degradation in FinFETs
    Makarov, A. A.
    Tyaginov, S. E.
    Kaczer, B.
    Jech, M.
    Chasin, A.
    Grill, A.
    Hellings, G.
    Vexler, M. I.
    Linten, D.
    Grasser, T.
    SEMICONDUCTORS, 2018, 52 (10) : 1298 - 1302
  • [17] A review of hot-carrier degradation mechanisms in MOSFETs
    Acovic, A
    LaRosa, G
    Sun, YC
    MICROELECTRONICS AND RELIABILITY, 1996, 36 (7-8): : 845 - 869
  • [18] Modeling and characterization of the nMOS transistor stressed by hot-carrier injection
    Bouchakour, R
    Hardy, L
    Naviner, JF
    Limbourg, I
    Jourdain, M
    Jelloul, M
    38TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, PROCEEDINGS, VOLS 1 AND 2, 1996, : 61 - 64
  • [19] Modeling and characterization of the nMOS transistor stressed by hot-carrier injection
    Bouchakour, R
    Hardy, L
    Limbourg, I
    Jourdain, M
    ISCAS 96: 1996 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - CIRCUITS AND SYSTEMS CONNECTING THE WORLD, VOL 4, 1996, : 440 - 443
  • [20] INFLUENCE OF HOT-CARRIER STRESS ON THE KINK HYSTERESIS BEHAVIOR OF NMOSTS OPERATING AT LIQUID-HELIUM TEMPERATURES
    SIMOEN, E
    DIERICKX, B
    GAO, MH
    CLAEYS, C
    MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 457 - 460
12345