Dynamic Force Microscopy Study on Si(111)root 3x root 3-Ag Using a Tuning Fork Atomic Force Microscope

被引:0
|
作者
Lange, Manfred [1 ,2 ]
van Voerden, Dennis [1 ,2 ]
Moeller, Rolf [1 ,2 ]
机构
[1] Univ Duisburg Essen, Fac Phys, Lotharstr 1, D-47048 Duisburg, Germany
[2] Ctr Nanointegrat Duisburg Essen CeNIDE, D-47048 Duisburg, Germany
来源
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2011年 / 9卷
关键词
Energy dissipation; Atomic force microscopy; Force spectroscopy; Ag; Si(111);
D O I
10.1380/ejssnt.2011.26
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
By evaporating silver onto Si(111)7X 7 surfaces, heterogeneous samples can be prepared that enable the direct comparison of surfaces with very different characteristics. In contrast to the bare Si(111)7X 7 reconstructed surface, the silver film assumes reconstructions such as root 3X root 3, and (111) oriented silver islands may also be present depending on the degree of coverage and the annealing or growth temperature. In the present study, force-distance spectra are measured using a home-built low-temperature tuning fork atomic force microscope. The focus of this work is a comparative study of different types of surfaces using the same tip in order to form an understanding of dissipation in non-contact atomic force microscopy. Force spectroscopic studies of the Ag islands revealed two different types of spectra occurring with the same probability. In some cases, the frequency shift-distance (df-z) spectra exhibited the commonly observed distance dependence in the attractive regime with a single minimum. In other cases, df-z spectra exhibited a double minimum, which corresponds to the dissipation process. In contrast to the measurements on the Ag islands, all df-z spectra from the root 3X root 3 reconstructed surface showed a double-well structure. We found evidence that the dissipation processes on the Ag islands and the root 3X root 3 reconstructed surface are induced by reversible tip modifications
引用
收藏
页码:26 / 29
页数:4
相关论文
共 50 条
  • [21] Dissolution and segregation of monolayer Cu, Ni and Co atoms on the Si(111)-root 3x root 3-Ag surface induced by thermal annealing
    Yuhara, J
    Ishigami, R
    Ishikawa, D
    Morita, K
    APPLIED SURFACE SCIENCE, 1996, 104 : 163 - 168
  • [22] Structural transformation of hydrogen-adsorbed Si(111)-root 3x root 3-Ag surfaces induced by electron-stimulated desorption
    Watanabe, H
    Ichikawa, M
    SURFACE SCIENCE, 1997, 383 (01) : 95 - 102
  • [23] Atomic-Scale Imaging of B/Si(111)√3x√3 Surface by Noncontact Atomic Force Microscopy
    Kinoshita, Masaharu
    Naitoh, Yoshitaka
    Li, Yan Jun
    Kageshima, Masami
    Sugawara, Yasuhiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (10) : 8218 - 8220
  • [24] Refined structure of (root 3x root 3) Sb/Si(111)
    Kim, C
    Walko, DA
    Robinson, IK
    SURFACE SCIENCE, 1997, 388 (1-3) : 242 - 247
  • [25] Electron standing waves on the Si(111)-√3x√3-Ag surface
    Sato, N
    Takeda, S
    Nagao, T
    Hasegawa, S
    PHYSICAL REVIEW B, 1999, 59 (03): : 2035 - 2039
  • [26] Non-contact atomic force microscopy investigation of the (1 x 1) and (root 3 x root 3) phases on the Pb/Si(111) surface
    Ohiso, A.
    Sugimoto, Y.
    Mizuta, K.
    Abe, M.
    Morita, S.
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2007, 5 (67-73) : 67 - 73
  • [27] Influence of Ag adsorbate on the Si(111)-root 3x root 3-(Au,Cu) structure
    Yuhara, J
    Ishikawa, D
    Morita, K
    APPLIED SURFACE SCIENCE, 1997, 117 : 94 - 98
  • [28] root 21 x root 21 phase formed by Na adsorption on Si(111) root 3 x root 3-Ag and its electronic structure
    Konishi, Mitsuru
    Matsuda, Iwao
    Liu, Canhua
    Morikawa, Harumo
    Hasegawa, Shuji
    Okuda, Taichi
    Kinoshita, Toyohiko
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2005, 3 : 107 - 112
  • [29] STUDY ON THE Si(111) ROOT 3MUL ROOT 3-Ag SURFACE STRUCTURE BY X-RAY DIFFRACTION.
    Univ of Tokyo, Roppongi, Jpn, Univ of Tokyo, Roppongi, Jpn
    Jpn J Appl Phys Part 2, 1988, 5 (753-755):
  • [30] Atomic and electronic structure of the Si(111)-√3x√3-Ag surface reexamined using first-principles calculations
    Watanabe, S.
    Kondo, Y.
    Nakamura, Y.
    Nakamura, J.
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2000, 1 (03) : 167 - 172