THE COMPENSATION EFFECT IN THE IMPURITY BAND OF DOPED SEMICONDUCTORS

被引：4

作者：

LUZ, DM

MAKLER, SS

ANDA, EV

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1988年 / 21卷 / 29期

关键词：

D O I：

10.1088/0022-3719/21/29/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5149 / 5162

页数：14

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