PROPERTIES AND DEVICE APPLICATIONS OF DEEP QUANTUM-WELL RESONANT TUNNELING STRUCTURES

被引：1
|
作者：
MEHDI, I
MAINS, RK
HADDAD, GI
REDDY, UK
机构：
[1] Center for High-Frequency Microelectronics, Department of Electrical Engineering, Computer Science. The University of Michigan, Ann Arbor
来源：
SURFACE SCIENCE | 1990年 / 228卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(90)90343-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A self-consistent quantum mechanical simulation is used to study the effects of doping, spacer layers, barrier height, barrier width and well doping on the bound state and bound state charge in a deep quantum well resonant tunneling structure. Experimental results for the GaAs and InP heterostructure material system are presented. Finally various device applications, such as microwave video detectors, charge transfer devices, and three terminal devices are proposed. © 1990.
引用
收藏
页码：426 / 429
页数：4
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