FLUCTUATION OF FIXED OXIDE CHARGE IN MIS STRUCTURES AND C-V MEASUREMENTS

被引:0
|
作者
PEIKOV, PC [1 ]
机构
[1] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,SOFIA,BULGARIA
来源
关键词
D O I
暂无
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:1311 / 1314
页数:4
相关论文
共 50 条
  • [31] On the C-V characteristics of the MFS and MFOS structures
    Huazhong Ligong Daxue Xuebao, 1 (79):
  • [32] Dynamic C-V characteristics of MOS structures
    Sakalauskas, S.
    Vaitonis, Z.
    LITHUANIAN JOURNAL OF PHYSICS, 2007, 47 (04): : 451 - 456
  • [33] Influence of quantum effects on the determination of gate oxide thickness from C-V measurements
    Dmowski, K.
    Halimaoui, A.
    Journal of Non-Crystalline Solids, 1997, 216 : 185 - 191
  • [34] The influence of quantum effects on the determination of gate oxide thickness from C-V measurements
    Dmowski, K
    Halimaoui, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 216 : 185 - 191
  • [35] C-V and I-V characteristics of ultrathin-oxide MOS structures: Identification and analysis
    Zhdan A.G.
    Chucheva G.V.
    Naryshkina V.G.
    Russian Microelectronics, 2007, 36 (3) : 139 - 147
  • [36] Effects of peripheral region on C-V characteristics of organic MIS capacitors
    Jung, K. D.
    Jin, S. H.
    Lee, C. A.
    Park, C. B.
    Park, B. G.
    Shin, H. C.
    Lee, J. D.
    IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, 2005, : 1053 - 1056
  • [37] Effect of Series Resistance on C-V Characteristics of an MIS Capacitor.
    Jakubowski, Andrzej
    Jagodzinski, Pawel
    Archiwum Elektrotechniki (Warsaw), 1975, 24 (01): : 209 - 210
  • [38] AN EVEN C-V CHARACTERISTIC PARAMETRIC AMPLIFIER USING MIS VARACTORS
    MARQUARDT, J
    SCHIEK
    PROCEEDINGS OF THE IEEE, 1969, 57 (11) : 2076 - +
  • [39] HgCdTe MIS器件制备及其C-V特性研究
    张朝阳
    蔡毅
    张鹏翔
    红外技术, 2002, (05) : 42 - 45
  • [40] 聚酰亚胺LB膜MIS结构C-V特性
    林海安,吴冲若
    材料研究学报, 1994, (01) : 88 - 92