CHARGE TRAPPING AND DEVICE DEGRADATION INDUCED BY X-RAY-IRRADIATION IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：4

作者：

CAMPBELL, SA ^{[1
]}

LEE, KH ^{[1
]}

LI, HH ^{[1
]}

NACHMAN, R ^{[1
]}

CERRINA, F ^{[1
]}

机构：

[1] UNIV WISCONSIN MADISON, CTR XRAY LITHOG, STOUGHTON, WI 53589 USA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 12期

关键词：

D O I：

10.1063/1.110723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxide charge trapping and interface trap generation by hot carrier stress was studied with x-ray irradiated metal-oxide-semiconductor field-effect transistors. Although the threshold voltage and transconductance recovered after a hydrogen anneal at 450-degrees-C, the irradiated and annealed devices were more susceptible to damage under hot carrier stressing, both at the Si/SiO2 interface and in the oxide bulk. The latent damage was quantified using the various gate voltage hot carrier stresses. It is found that most of the latent damage is related to oxide hole traps and interface traps. Electron trapping is present, but is less significant.

引用

页码：1646 / 1647

页数：2

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