HIGH-PERFORMANCE ELECTRON-BEAM LITHOGRAPHY FOR 0.5 MU-M SEMICONDUCTOR-DEVICE FABRICATION

被引：3
|
作者：
SAKASHITA, T
NOMURA, N
HASHIMOTO, K
KOIZUMI, T
HARAFUJI, K
MISAKA, A
SAWADA, N
KAWAKITA, K
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词：
D O I：
10.1116/1.584526
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1528 / 1531
页数：4
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