CHARACTERISTICS OF THE ABSORPTION NEAR THE FUNDAMENTAL-BAND EDGE OF NARROW-GAP CDXHG1-XTE

被引：0
|
作者：
SAGINOV, LD
PONOMARENKO, VP
FEDIRKO, VA
STAFEEV, VI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：298 / 300
页数：3
相关论文
共 50 条
  • [41] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRADED-GAP EPITAXIAL CDXHG1-XTE LAYERS
    PAWLIKOWSKI, JM
    THIN SOLID FILMS, 1977, 44 (03) : 241 - 276
  • [42] ELECTRICAL TRANSPORT PROPERTIES OF EPITAXIAL GRADED-GAP CDXHG1-XTE LAYERS
    SZATKOWSKI, J
    SIERANSKI, K
    PAWLIKOWSKI, JM
    PLACZEKPOPKO, E
    BECLA, P
    DUDZIAK, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02): : 721 - 727
  • [43] FUNDAMENTAL REFLECTION OF CDXHG1-XTE CRYSTALS IN 1.9 TO 3.1 EV ENERGY-RANGE
    KISIEL, A
    PODGORNY, M
    RODZIK, A
    GIRIAT, W
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02): : 457 - 460
  • [44] SOME PROPERTIES OF CDXHG1-XTE DIODES NEAR LIQUID-HELIUM TEMPERATURE
    ALEKSEEV, AG
    SEDNEV, MV
    STAFEEV, VI
    PETROV, IN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (12): : 1356 - 1357
  • [45] OPTICAL-PROPERTIES OF RUTILE NEAR ITS FUNDAMENTAL-BAND GAP
    AMTOUT, A
    LEONELLI, R
    PHYSICAL REVIEW B, 1995, 51 (11) : 6842 - 6851
  • [46] PHOTOTHERMOMAGNETIC EFFECT AND PHOTOCONDUCTIVITY OF VARIABLE-GAP CDXHG1-XTE CRYSTALS IN THE MICROWAVE RANGE
    KICHIGIN, DA
    RARENKO, IM
    TALYANSKII, EB
    KHALAMEIDA, DD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 162 - 164
  • [47] INFLUENCE OF THE 5D ELECTRONS OF MERCURY ON THE COLLAPSE OF THE BAND-GAP IN CDXHG1-XTE SOLID-SOLUTIONS
    TEREKHOV, VA
    KASHKAROV, VM
    TETERIN, YA
    RARENKO, IM
    DOMASHEVSKAYA, EP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1038 - 1040
  • [48] LUMINESCENCE OF VARIABLE-GAP CDXHG1-XTE STRUCTURES UNDER THE MAGNETOCONCENTRATION EFFECT CONDITIONS
    BOLGOV, SS
    MALYUTENKO, VK
    PIPA, VI
    SAVCHENKO, AP
    YUNOVICH, AE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (09): : 1049 - 1051
  • [49] VARIATION OF THE STRUCTURAL AND PHOTOELECTRIC CHARACTERISTICS OF CDXHG1-XTE CRYSTALS UNDER MECHANICAL IMPACT
    DYAKIN, VV
    KOVAL, VV
    LYUBCHENKO, AV
    SALKOV, EA
    CHALAYA, VG
    INORGANIC MATERIALS, 1989, 25 (10) : 1393 - 1395
  • [50] STATIC CHARACTERISTICS OF METAL-INSULATOR SEMICONDUCTOR TRANSISTORS MADE OF CDXHG1-XTE
    PONOMARENKO, VP
    SHIMANSKII, IV
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 38 - 39
12345