MORPHOLOGICAL TRANSITION OF INAS ISLANDS ON GAAS(001) UPON DEPOSITION OF A GAAS CAPPING LAYER

被引：33

作者：

LIN, XW ^{[1
]}

WASHBURN, J ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

WEBER, ER ^{[1
]}

SASAKI, A ^{[1
]}

WAKAHARA, A ^{[1
]}

NABETANI, Y ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 60601,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interaction between a GaAs cap and InAs islands grown on vicinal GaAs(001) has been studied by transmission electron microscopy and atomic force microscopy. Samples were prepared by molecular beam epitaxy at 480 degrees C. Upon GaAs cap deposition, it was found that the previously grown InAs islands undergo a novel type of morphological transition, i.e., a transition from disk-shaped to ring-shaped islands. InAs becomes depleted or entirely absent in the central area of what had been a disk-shaped InAs island. The GaAs cap was also shown to be virtually absent within the same central region, resulting in the formation of crater-like surface depressions.

引用

页码：1677 / 1679

页数：3

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