LASER ANNEALED POLYSILICON MOSFETS

被引:0
|
作者
MARSHALL, S
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:69 / 69
页数:1
相关论文
共 50 条
  • [1] LASER ANNEALED POLYSILICON
    AKASAKA, Y
    NISHIMURA, T
    JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1983, 8 : 183 - 194
  • [2] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2
    TASCH, AF
    HOLLOWAY, TC
    LEE, KF
    GIBBONS, JF
    ELECTRONICS LETTERS, 1979, 15 (14) : 435 - 437
  • [3] DIFFRACTION STUDIES OF LASER ANNEALED POLYSILICON
    DINGLEY, DJ
    BURNS, G
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (68): : 433 - 436
  • [4] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ
    KAMINS, TI
    PIANETTA, PA
    ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216
  • [5] Modeling of laser-annealed polysilicon TFT characteristics
    Armstrong, GA
    Uppal, S
    Brotherton, SD
    Ayres, JR
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (07) : 315 - 318
  • [6] COMPARISON OF POLYSILICON FILMS ANNEALED WITH A CW OR PULSED LASER
    WILSON, SR
    PAULSON, WM
    WHITE, CW
    JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (01) : 143 - 159
  • [7] CHARACTERISTICS CONTROL OF MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON
    NISHIMURA, T
    AKASAKA, Y
    NAKATA, H
    MATSUMOTO, T
    ISHIZU, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C100 - C100
  • [8] A comparison of laser- and furnace-annealed polysilicon structure
    Parr, AA
    Gill, K
    Gardiner, DJ
    Hoyland, JD
    Sands, D
    Brunson, K
    Carline, RT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (01) : 47 - 54
  • [9] MICROMETER-GATE MESFETS ON LASER-ANNEALED POLYSILICON
    BARNARD, J
    FREY, J
    LEE, KF
    GIBBONS, JF
    ELECTRONICS LETTERS, 1980, 16 (08) : 297 - 298
  • [10] STACKED MOSFETS IN A SINGLE FILM OF LASER-RECRYSTALLIZED POLYSILICON
    GIBBONS, JF
    LEE, KF
    WU, FC
    EGGERMONT, GEJ
    ELECTRON DEVICE LETTERS, 1982, 3 (08): : 191 - 193