GROWTH AND CHARACTERIZATION OF SRS/ZNS MULTILAYERED ELECTROLUMINESCENT THIN-FILMS GROWN BY HOT-WALL TECHNIQUE

The growth of thin films of ZnS and SrS by the hot-wall evaporation technique has been investigated. By supplying additional sulfur (S) vapor, the deposition rate of ZnS was increased, allowing ZnS films to be grown at substrate temperatures over 400-degrees-C. SrS thin films were grown through the chemical reaction of Sr and S vapor with the substrate temperature in the region of 350-500-degrees-C. SrS/ZnS multilayered thin films were grown by the sequential deposition of the SrS and ZnS films. The (SrS/ZnS)51 multilayered thin film showed X-ray diffraction lines from both ZnS and SrS layers, even when the thickness of each SrS and ZnS layer is 20 nm. The electroluminescent devices with SrS: Ce/ZnS multilayered thin films showed a greenish blue EL emission.