ION-BEAM MICROFABRICATION

被引：0

作者：

GAMO, K ^{[1
]}

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

来源：

VACUUM | 1993年 / 44卷 / 11-12期

关键词：

D O I：

10.1016/0042-207X(93)90329-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion beam microfabrication technology plays increasingly important roles for VLSI, ULSI or future quantum effect devices fabrication because of its unique characteristics and has wide applications including etching, deposition, doping, material synthesis and modification and lithography. For etching, techniques with atomic-scale precision and minimal damage induction are required. In this paper, the importance of low-energy ion beams and characteristics of new etching techniques, such as digital etching, are discussed.

引用

页码：1089 / 1094

页数：6

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