LOW-CARBON INCORPORATION IN METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS USING DIMETHYLAMINE GALLANE

被引：3
|
作者：
ISHIKURA, K [1 ]
HAYASHI, K [1 ]
OGAWA, T [1 ]
HASEGAWA, F [1 ]
机构：
[1] TRI CHEM LAB INC, KANAGAWA 24303, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 7B期
关键词：
DIMETHYLAMINE GALLANE; DMAG; GAAS; MOMBE; CARBON INCORPORATION;
D O I：
10.1143/JJAP.32.L1014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dimethylamine gallane (DMAG) was demonstrated to be a promising precursor as a gallium source for metalorganic moleculor beam epitaxy (MOMBE) of GaAs with a low level of carbon incorporaticn. Epitaxial layers of GaAs were obtained at substrate temperatures above 250-degrees-C, and the hole concentration decreased with increasing substrate temperature. For the GaAs layer grown at 500-degrees-C, the hole concentration and Hall mobility were 1.2 x 10(15) cm-3 and 371 cm2/(V.s), respectively. Low temperature (4.2 K) photoluminescence indicated that the band-to-carbon transition was negligibly small compared with the donor bound exciton peak.
引用
收藏
页码：L1014 / L1016
页数：3
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