TRANSMISSION OF AN OBLIQUELY INCIDENT ELECTRON-WAVE THROUGH GAAS-ALXGA1-XAS STRUCTURES - APPLICATION TO AN ELECTRON-WAVE FILTER

被引：4

作者：

KANAN, AM ^{[1
]}

PURI, A ^{[1
]}

ODAGAKI, T ^{[1
]}

机构：

[1] KYOTO INST TECHNOL, DEPT PHYS, KYOTO 606, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.354119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission of an obliquely incident electron wave through GaAs-AlxGa1-xAs structures is analyzed using a generalized transmission matrix approach. Angle dependence is investigated quantitatively. Concepts of critical angle are discussed for step barrier structures. It is verified that the transmission probability is a function of longitudinal energy. Consequences of resonant tunneling of a non-normal incident electron wave through a double barrier heterostructure (DBHS) are discussed. It is found that the angle of incidence largely affects the probability of tunneling of electrons through DBHS. Application to an electron wave filter is discussed.

引用

页码：370 / 374

页数：5

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