Nanotechnology-The Basis for the Creation of New High-Reliability Elements

被引:0
|
作者
Smagin, V. A. [1 ]
机构
[1] Mozhaiskii Mil Engn & Space Acad, Ul Krasnyi Kursant 16, St Petersburg 197082, Russia
关键词
electronic elements; Shannon bridge circuit; three-dimensional back-up; governing parameter-of a connection; complexity and service life of an element; probability; nanotechnology;
D O I
10.3103/S0146411608020090
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
One possible method of increasing the reliability of electronic elements in the future is considered. The method is based on the use of three-dimensional back-up. The construction of such electronic elements can be achieved on the basis of nanotechnologies.
引用
收藏
页码:109 / 111
页数:3
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