Nanotechnology-The Basis for the Creation of New High-Reliability Elements
被引:0
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作者:
Smagin, V. A.
论文数: 0引用数: 0
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机构:
Mozhaiskii Mil Engn & Space Acad, Ul Krasnyi Kursant 16, St Petersburg 197082, RussiaMozhaiskii Mil Engn & Space Acad, Ul Krasnyi Kursant 16, St Petersburg 197082, Russia
Smagin, V. A.
[1
]
机构:
[1] Mozhaiskii Mil Engn & Space Acad, Ul Krasnyi Kursant 16, St Petersburg 197082, Russia
electronic elements;
Shannon bridge circuit;
three-dimensional back-up;
governing parameter-of a connection;
complexity and service life of an element;
probability;
nanotechnology;
D O I:
10.3103/S0146411608020090
中图分类号:
TP [自动化技术、计算机技术];
学科分类号:
0812 ;
摘要:
One possible method of increasing the reliability of electronic elements in the future is considered. The method is based on the use of three-dimensional back-up. The construction of such electronic elements can be achieved on the basis of nanotechnologies.