PYROELECTRICITY IN (PB0.98MN0.02)(ZR0.6TI0.4)O3 SPUTTERED THIN-FILMS

被引：1
|
作者：
PIGNOLET, A
WANG, L
SCHMID, PE
PAVEL, J
LEVY, F
机构：
[1] Institut de Physique Appliquée, École Polytechnique, Fédérale de Lausanne, CH-1015 Lausanne, Suisse
来源：
FERROELECTRICS | 1992年 / 128卷 / 1-4期
关键词：
D O I：
10.1080/00150199208015063
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Manganese-doped lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is rhombohedral. The dielectric, ferroelectric and pyroelectric properties are reported. The influence of post-deposition treatment and poling treatment on the pyroelectric coefficient are discussed.
引用
收藏
页码：37 / 42
页数：6
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