共 50 条
- [42] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INGAAS AND INALGAAS FILMS ON GAAS INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 191 - 197
- [44] INTERFACIAL REACTIONS IN EPITAXIAL AL/TI1-XALXN (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.2) MODEL DIFFUSION-BARRIER STRUCTURES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (01): : 11 - 17
- [48] ELECTRONIC CONFIGURATION OF IRON SUBSTITUTED HIGH-ENERGY DENSITY BATTERY MATERIALS - LIXVL-YFEYS2 (0 LESS-THAN OR EQUAL-TO X LESS-THAN OR EQUAL-TO 1- 0 LESS-THAN OR EQUAL-TO Y LESS-THAN OR EQUAL-TO 1/2 BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 474 - 474
- [50] EFFECT OF TEMPERATURE ANNEALING ON THE PROPERTIES OF A-SI1-XCX-H FILMS (0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-1) FIZIKA TVERDOGO TELA, 1992, 34 (01): : 326 - 328