SATURATION OF CURRENT AND STEP-LIKE DISTRIBUTION OF FIELD IN PURE P-TYPE GE

被引：0

|

作者：

GOLOSAI, NI ^{[1
]}

SIDOROV, VI ^{[1
]}

机构：

[1] ACAD SCI USSR, RADIO ENGN & ELECT INST, MOSCOW, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1976 / 1978

页数：3

相关论文

共 50 条

[21] DIELECTRIC-CONSTANT AND PLASMA FREQUENCY OF P-TYPE GE LIKE SEMICONDUCTORS
COMBESCOT, M
NOZIERES, P
SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 301 - +
[22] EFFECT OF UNIAXIAL-STRESS ON THE SATURATION OF INTERVALENCE-BAND ABSORPTION IN P-TYPE GE
JAMES, RB
SMITH, DL
PHYSICAL REVIEW B, 1983, 28 (02): : 586 - 592
[23] POTENTIAL MEASUREMENTS DURING JET ETCHING OF P-TYPE GE AND P-TYPE SI
SCHMIDT, PF
BLOMGREN, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) : 694 - 700
[24] INFRARED SATURATION SPECTROSCOPY IN P-TYPE GERMANIUM
KEILMANN, F
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) : 592 - 597
[25] SURFACE RELAXATION OF A CRYSTAL PLATE WITH A STEP-LIKE DISTRIBUTION OF IMPURITY ATOMS
HARTWIG, J
CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (11) : 1297 - 1307
[26] GALVANOMAGNETIC EFFECTS IN DEFORMED P-TYPE GE
MITIN, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 149 - 152
[27] PIEZORESISTANCE OF UNIAXIALLY DEFORMED P-TYPE GE
ELIZAROV, AI
KOLOMOETS, VV
MITIN, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 912 - 913
[28] Light scattering in p-type GaAs:Ge
J Appl Phys, 4 (2388):
[29] THEORY OF SATURABLE ABSORPTION IN P-TYPE GE
JAMES, RB
SMITH, DL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 310 - 310
[30] Light scattering in p-type GaAs:Ge
MunozHernandez, RA
JimenezSandoval, S
TorresDelgado, G
Roch, C
Chen, XK
Irwin, JC
JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2388 - 2395

← 1 2 3 4 5 →