LOW-LEAKAGE HIGH-GAIN GAINASP-INP AVALANCHE PHOTODETECTORS

被引:0
|
作者
DIADIUK, V [1 ]
GROVES, SH [1 ]
HURWITZ, CE [1 ]
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
关键词
D O I
10.1109/T-ED.1980.20203
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2187 / 2187
页数:1
相关论文
共 50 条
  • [31] PREVENTION OF CURRENT LEAKAGE IN MASS-TRANSPORTED GAINASP-INP BURIED-HETEROSTRUCTURE LASERS WITH NARROW TRANSPORTED REGIONS
    LIAU, ZL
    WALPOLE, JN
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (03) : 313 - 319
  • [32] 1.5-MU-M GAINASP-INP DISTRIBUTED REFLECTOR (DR) LASER WITH HIGH-LOW REFLECTION GRATING STRUCTURE
    AOKI, M
    KOMORI, K
    MIYAMOTO, Y
    ARAI, S
    SUEMATSU, Y
    ELECTRONICS LETTERS, 1989, 25 (24) : 1650 - 1651
  • [33] EXTREMELY LOW-THRESHOLD 1.3 MU-M GAINASP-INP DFB PPIBH LASER
    OHKURA, Y
    YOSHIDA, N
    TAKEMOTO, A
    KAKIMOTO, S
    ELECTRONICS LETTERS, 1988, 24 (24) : 1508 - 1510
  • [34] Based Simulation of High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode
    Lei, W.
    Guo, F. M.
    Lu, W.
    Xiong, D. Y.
    Zhu, Z. Q.
    Chu, J. H.
    NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2008, : 37 - +
  • [35] Numerical Simulation of the High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode
    Hu, D. P.
    Xiong, D. Y.
    Guo, F. M.
    ADVANCES IN MATERIALS AND MATERIALS PROCESSING, PTS 1-3, 2013, 652-654 : 612 - 615
  • [36] HIGH-GAIN INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS
    WRIGHT, PD
    NELSON, RJ
    CELLA, T
    APPLIED PHYSICS LETTERS, 1980, 37 (02) : 192 - 194
  • [37] LOW-THRESHOLD CURRENT-DENSITY OPERATION OF GAINASP-INP LASER WITH MULTIPLE REFLECTOR MICROCAVITIES
    SHIN, KC
    TAMURA, M
    KASUKAWA, A
    SERIZAWA, N
    KURIHASHI, S
    TAMURA, S
    ARAI, S
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (10) : 1119 - 1121
  • [38] Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP-InP quantum-wire lasers
    Haque, A
    Maruyama, T
    Yagi, H
    Sano, T
    Dhanorm, P
    Arai, S
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (09) : 1344 - 1351
  • [39] Modeling of Avalanche Gain for High-speed InP/InGaAs Avalanche Photodiodes
    Park, J. K.
    Yun, I.
    EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, : 188 - 191
  • [40] HIGH-FREQUENCY MODULATION OF GAINASP-INP INJECTION-LASERS WITH HEATED CHARGE-CARRIERS
    TOLSTIKHIN, VI
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1992, 18 (19): : 50 - 55