INFLUENCE OF DYNAMICAL INTERACTIONS BETWEEN DENSITY AND MOBILITY OF CARRIERS IN THE CHANNEL ON 1/F NOISE OF MOS-TRANSISTORS BELOW SATURATION .2. IMPLICATIONS

被引：1

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作者：

GRABOWSKI, F

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来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 10期

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D O I：

10.1016/0038-1101(89)90071-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：915 / 918

页数：4

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