EQUIVALENT INPUT SPECTRUM AND DRAIN CURRENT SPECTRUM FOR 1-F NOISE IN SHORT CHANNEL MOS-TRANSISTORS

被引：5

|

作者：

GENTIL, P

MOUNIB, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 05期

关键词：

D O I：

10.1016/0038-1101(81)90037-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：411 / 414

页数：4

相关论文

共 36 条

[1] 1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS
Gaubert, P.
Teramoto, A.
Ohmi, T.
FLUCTUATION AND NOISE LETTERS, 2011, 10 (04): : 431 - 445
[2] MODEL FOR 1-F NOISE IN MOS-TRANSISTORS BIASED IN THE LINEAR REGION
VANDAMME, LKJ
SOLID-STATE ELECTRONICS, 1980, 23 (04) : 317 - 323
[3] EXPERIMENTAL RESULTS ON FAST SURFACE STATES AND 1-F NOISE IN MOS-TRANSISTORS
BROUX, G
VANOVERSTRAETEN, R
DECLERCK, G
ELECTRONICS LETTERS, 1975, 11 (05) : 97 - 98
[4] ON THE ORIGIN OF 1/F NOISE IN MOS-TRANSISTORS
MAY, EJP
JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 161 - 163
[5] NEW ANALYTICAL EXPRESSION FOR THE DRAIN CURRENT OF SHORT-CHANNEL MOS-TRANSISTORS IN THE TRIODE REGION
DIMITRIJEV, S
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ELECTRONICS LETTERS, 1987, 23 (16) : 862 - 864
[6] SUBSTRATE CURRENT IN SHORT NORMAL-CHANNEL MOS-TRANSISTORS
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ASENOV, A
INTERNATIONAL JOURNAL OF ELECTRONICS, 1983, 55 (04) : 567 - 578
[7] INVESTIGATION OF DRAIN CURRENT RTS NOISE IN SMALL AREA SILICON MOS-TRANSISTORS
ROUX, O
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SIMOEN, E
CLAEYS, C
GHIBAUDO, G
BRINI, J
MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 547 - 550
[8] 1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS
MIKOSHIBA, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 965 - 970
[9] INFLUENCE OF THE INTERFACE AND OF THE CHANNEL VOLUME ON 1/F NOISE OF MOS-TRANSISTORS BIASED IN THE LINEAR REGION AT STRONG INVERSION
GRABOWSKI, F
SOLID-STATE ELECTRONICS, 1988, 31 (01) : 115 - 120
[10] CONSTANT-CURRENT CONTOUR PLOT FOR THE DESCRIPTION OF SHORT-CHANNEL EFFECTS OF MOS-TRANSISTORS
KIM, CK
GOODWINJOHANSSON, S
SHARMA, D
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1619 - 1621

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