首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
COMPARISON OF CHARACTERISTICS OF LIGHTLY-DOPED DRAIN MOSFETS
被引:5
|
作者
:
LIU, BD
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering National Cheng Kung University
LIU, BD
CHIEN, IK
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering National Cheng Kung University
CHIEN, IK
机构
:
[1]
Department of Electrical Engineering National Cheng Kung University
来源
:
SOLID-STATE ELECTRONICS
|
1990年
/ 33卷
/ 01期
关键词
:
D O I
:
10.1016/0038-1101(90)90020-F
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:143 / 144
页数:2
相关论文
共 50 条
[31]
A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs
Dutta, Pradipta
论文数:
0
引用数:
0
h-index:
0
机构:
KIIT Univ, Sch Technol Elect & Tele Commun Engn, Bhubaneswar 751024, Orissa, India
KIIT Univ, Sch Technol Elect & Tele Commun Engn, Bhubaneswar 751024, Orissa, India
Dutta, Pradipta
Syamal, Binit
论文数:
0
引用数:
0
h-index:
0
机构:
Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
KIIT Univ, Sch Technol Elect & Tele Commun Engn, Bhubaneswar 751024, Orissa, India
Syamal, Binit
Koley, Kalyan
论文数:
0
引用数:
0
h-index:
0
机构:
Jadavpur Univ, Dept Elect & Commun Engn, Nano Device Simulat Lab, Kolkata 700032, India
KIIT Univ, Sch Technol Elect & Tele Commun Engn, Bhubaneswar 751024, Orissa, India
Koley, Kalyan
Mohankumar, N.
论文数:
0
引用数:
0
h-index:
0
机构:
SKP Engn Coll, Thiruvannamalai 606601, Tamil Nadu, India
KIIT Univ, Sch Technol Elect & Tele Commun Engn, Bhubaneswar 751024, Orissa, India
Mohankumar, N.
Sarkar, C. K.
论文数:
0
引用数:
0
h-index:
0
机构:
Jadavpur Univ, Dept Elect & Commun Engn, Nano Device Simulat Lab, Kolkata 700032, India
KIIT Univ, Sch Technol Elect & Tele Commun Engn, Bhubaneswar 751024, Orissa, India
Sarkar, C. K.
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE,
2015,
12
(09)
: 2515
-
2522
[32]
EFFECTS OF LIGHTLY DOPED DRAIN STRUCTURE WITH OPTIMUM ION DOSE ON P-CHANNEL MOSFETS
KAGA, T
论文数:
0
引用数:
0
h-index:
0
KAGA, T
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
SAKAI, Y
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1988,
35
(12)
: 2384
-
2390
[33]
CORNER BREAKDOWN IN MOS-TRANSISTORS WITH LIGHTLY-DOPED DRAINS
COE, DJ
论文数:
0
引用数:
0
h-index:
0
COE, DJ
BROCKMAN, HE
论文数:
0
引用数:
0
h-index:
0
BROCKMAN, HE
SOLID-STATE ELECTRONICS,
1979,
22
(04)
: 444
-
445
[34]
LASER TRANSITION AND PHOTON ENERGY OF GAAS IN LIGHTLY-DOPED LIMIT
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
ROSSI, JA
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
WILLIAMS, FV
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, FV
BURD, JW
论文数:
0
引用数:
0
h-index:
0
BURD, JW
APPLIED PHYSICS LETTERS,
1968,
13
(04)
: 117
-
&
[35]
Temperature dependent photoemission spectroscopy on lightly-doped sodium tungsten bronze
Paul, Sanhita
论文数:
0
引用数:
0
h-index:
0
机构:
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Paul, Sanhita
Ghosh, Anirudha
论文数:
0
引用数:
0
h-index:
0
机构:
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Ghosh, Anirudha
论文数:
引用数:
h-index:
机构:
Chakraborty, Anirban
Petaccia, Luca
论文数:
0
引用数:
0
h-index:
0
机构:
Sincrotrone Trieste SCpA, I-34149 Trieste, Italy
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Petaccia, Luca
Topwal, D.
论文数:
0
引用数:
0
h-index:
0
机构:
Sincrotrone Trieste SCpA, I-34149 Trieste, Italy
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Topwal, D.
Sarma, D. D.
论文数:
0
引用数:
0
h-index:
0
机构:
Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Sarma, D. D.
Oishi, S.
论文数:
0
引用数:
0
h-index:
0
机构:
Shinshu Univ, Fac Engn, Nagano 3808553, Japan
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Oishi, S.
Raj, Satyabrata
论文数:
0
引用数:
0
h-index:
0
机构:
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Nadia 741252, India
Raj, Satyabrata
SOLID STATE COMMUNICATIONS,
2012,
152
(06)
: 493
-
496
[36]
Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs
Bhartiat, Mini
论文数:
0
引用数:
0
h-index:
0
机构:
Thapar Inst Engn & Technol, Elect & Commun cat Dept, Patiala, Punjab, India
Thapar Inst Engn & Technol, Elect & Commun cat Dept, Patiala, Punjab, India
Bhartiat, Mini
Chatterjeet, Arun Kumar
论文数:
0
引用数:
0
h-index:
0
机构:
Thapar Inst Engn & Technol, Elect & Commun cat Dept, Patiala, Punjab, India
Thapar Inst Engn & Technol, Elect & Commun cat Dept, Patiala, Punjab, India
Chatterjeet, Arun Kumar
JOURNAL OF SEMICONDUCTORS,
2015,
36
(04)
[37]
Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs
Mini Bhartia
论文数:
0
引用数:
0
h-index:
0
机构:
Electronics and Communication Department,Thapar Institute of Engineering and Technology
Electronics and Communication Department,Thapar Institute of Engineering and Technology
Mini Bhartia
论文数:
引用数:
h-index:
机构:
Arun Kumar Chatterjee
Journal of Semiconductors,
2015,
(04)
: 48
-
54
[38]
Low-frequency generation-recombination noise in fully overlapped lightly doped drain MOSFETs
Kumar, A
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India
Kumar, A
Kalra, E
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India
Kalra, E
Haldar, S
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India
Haldar, S
Gupta, RS
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India
Gupta, RS
MICROELECTRONICS JOURNAL,
2001,
32
(01)
: 43
-
47
[39]
Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs
Mini Bhartia
论文数:
0
引用数:
0
h-index:
0
机构:
ElectronicsandCommunicationDepartment,ThaparInstituteofEngineeringandTechnology
Mini Bhartia
Arun Kumar Chatterjee
论文数:
0
引用数:
0
h-index:
0
机构:
ElectronicsandCommunicationDepartment,ThaparInstituteofEngineeringandTechnology
Arun Kumar Chatterjee
Journal of Semiconductors,
2015,
36
(04)
: 48
-
54
[40]
Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures
Taya, Jun
论文数:
0
引用数:
0
h-index:
0
机构:
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan
Ryukoku Univ, High Tech Res Ctr, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Taya, Jun
Kojima, Kazuki
论文数:
0
引用数:
0
h-index:
0
机构:
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan
Ryukoku Univ, High Tech Res Ctr, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Kojima, Kazuki
Mukuda, Tomonori
论文数:
0
引用数:
0
h-index:
0
机构:
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan
Ryukoku Univ, High Tech Res Ctr, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Mukuda, Tomonori
Nakashima, Akihiro
论文数:
0
引用数:
0
h-index:
0
机构:
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan
Ryukoku Univ, High Tech Res Ctr, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Nakashima, Akihiro
Sagawa, Yuki
论文数:
0
引用数:
0
h-index:
0
机构:
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan
Ryukoku Univ, High Tech Res Ctr, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Sagawa, Yuki
Matsuda, Tokiyoshi
论文数:
0
引用数:
0
h-index:
0
机构:
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Matsuda, Tokiyoshi
Kimura, Mutsumi
论文数:
0
引用数:
0
h-index:
0
机构:
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
Kimura, Mutsumi
IEICE TRANSACTIONS ON ELECTRONICS,
2014,
E97C
(11):
: 1068
-
1073
←
1
2
3
4
5
→